Must have a Master’s degree in Chemical Engineering, Electrical Engineering, MechanicalEngineering, Physics, Chemistry, Materials Science or a related field, plus 2 years ofexperience in process engineering.Of the required experience, must have 1 year of experience in at least 2 of thefollowing: Design of Experiment (DOE); data analysis; semiconductor fabrication; and,plasma physics, plasma chemistry, or plasma reactors.Of the required experience, must have 1 year of experience in at least 3 of thefollowing metrology used in semiconductor processing: Transmission Electron Microscopy(TEM); Scanning Electron Microscopy (SEM); Critical Dimension SEM (CD-SEM); Energy Dispersive X-ray Spectroscopy (EDS); Focused Ion Beam (FIB); Atomic Force Microscopy (AFM); X-ray Diffraction (XRD); Emission Spectroscopy; Raman Spectroscopy; Spectroscopic Ellipsometry; Quartz PCI; or Fourier Transform Infrared Spectroscopy (FT-IR).Of the required experience, must have 1 year of experience in at least 3 of the following: wafer cross section techniques; wafer fabrication processes; ion transport phenomena; dynamic random-access memory (DRAM); plasma etching; plasma simulation; semiconductor thin film deposition; Atomic Layer Deposition (ALD); 3D NAND Flash; Chemical Vapor Deposition (CVD); or Plasma Enhanced Chemical Vapor Deposition (PECVD).Must have at least 1 year of experience in 1 of the following software: Matlab; Labview; JMP; Hybrid Plasma Equipment Model (HPEM); Mathematica; or Origin.Experience may be obtained in graduate school

Minimum Salary: 80000 Maximum Salary: 95000 Salary Unit: Yearly